دیتاشیت P5504EDG-VB
مشخصات دیتاشیت
| نام دیتاشیت |
P5504EDG-VB
|
| حجم فایل |
67.896
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
VBsemi Elec P5504EDG-VB
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
3W
-
Total Gate Charge (Qg@Vgs):
60nC@10V
-
Drain Source Voltage (Vdss):
40V
-
Input Capacitance (Ciss@Vds):
2.872nF@25V
-
Continuous Drain Current (Id):
50A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
352pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
12mΩ@10V,17A
-
Package:
TO-252
-
Manufacturer:
VBsemi Elec
